BAE Systems plans to develop an RF analog and digital integrated circuit for broadband information processing

NASHUA, NH – Microelectronics experts at BAE Systems are advancing a project to develop integrated radio frequency (RF) electronics with wide spectral coverage, high resolution, wide dynamic range and broadband information processing.

Officials from the U.S. Defense Advanced Research Projects Agency (DARPA in Arlington, Va., have awarded a $5 million contract to BAE Systems Electronic Systems segment in Nashua, NH, to launch the second phase of technologies for Ultra Mixed Mode Scaled Integrated Program Circuits (T-MUSIC).

The second phase will refine enabling technologies for mixed-mode RF technologies by integrating analog RF electronics with digital electronics on the same wafer for future military communications, radar, and electronic warfare (EW) applications.

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T-MUSIC technology could achieve wide spectral coverage, high resolution, wide dynamic range and high information processing bandwidth. These capabilities can reduce electronic signal clutter.

T-MUSIC, part of the DARPA Electronics Resurgence Initiative (ERI), explores the integration of analog and digital mixed-mode RF electronics into advanced terrestrial semiconductor manufacturing processes, and seeks to establish a capability domestically manufactured for high performance RF. mixed-mode systems on a chip (SOC).

In addition to BAE Systems, the first phase of the T-MUSIC project involved four other research teams led by Raytheon Technologies Corp. ; University of California-Los Angeles; University of California-San Diego; and the University of Utah.

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The five circuit design teams worked closely with two selected foundry partners to support the development of advanced mixed-mode technologies at US onshore CMOS foundries. Partner foundries are Global Foundries in Santa Clara, California, and Tower Semiconductor in Migdal HaEmek, Israel.

A third group of researchers explored fundamental breakthroughs in ultra-wideband transistors, going well beyond current near-term advances in foundry technology. Research teams from the University of California, Los Angeles and the University of California, Berkeley examined new types of mixed-mode RF transistors to demonstrate the switching speed of 1 GHz transistors in scalable CMOS.

Under T-MUSIC’s Phase 2 contract, BAE Systems will perform the work in Merrimack, NH; Lexington, Massachusetts; and Manassas, Virginia. For more information, contact BAE Systems Electronic Systems online at www.baesystems.com.

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